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AOB430 N-Channel FET

AOB430 Description

www.DataSheet4U.com AOB430 N-Channel Enhancement Mode Field Effect Transistor General .
The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

AOB430 Features

* VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 mΩ (VGS =10V) RDS(ON) < 85 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G

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N-Channel FET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AOB430-like datasheet