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AOB434 N-Channel FET

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Description

www.DataSheet4U.com AOB434 N-Channel Enhancement Mode Field Effect Transistor General .
The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Features

* VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9.5 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed

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