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AOB438 N-Channel FET

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Description

www.DataSheet4U.com AOB438 N-Channel Enhancement Mode Field Effect Transistor General .
The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Features

* 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.7 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Curre

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