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AOD419 P-Channel MOSFET

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Description

www.DataSheet4U.com AOD419 P-Channel Enhancement Mode Field Effect Transistor General .
The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

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Datasheet Specifications

Part number
AOD419
Manufacturer
Alpha & Omega
File Size
145.40 KB
Datasheet
AOD419_AlphaOmega.pdf
Description
P-Channel MOSFET

Features

* VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive

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