AOD419 Datasheet (Alpha & Omega)

AOD419, P-Channel MOSFET

The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Standard Product AOD419 is Pb-free (meets ROHS & Sony 259 specif

AOD419 Features

* VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive