BLA8G1011LS-300, BLA8G1011L-300 Datasheet - Ampleon

BLA8G1011LS-300 Power LDMOS transistor

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.

BLA8G1011LS-300 Features

* Easy power control

* Integrated ESD protection

* Enhanced ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1030 MHz to 1090 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding Restric

BLA8G1011L-300-Ampleon.pdf

BLA8G1011LS-300 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLA8G1011LS-300, BLA8G1011L-300. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLA8G1011LS-300, BLA8G1011L-300

Manufacturer:

Ampleon

File Size:

400.62 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLA8G1011LS-300, BLA8G1011L-300.
Please refer to the document for exact specifications by model.

BLA8G1011LS-300 Distributor

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BLA8G1011LS-300 BLA8G1011L-300 Power LDMOS transistor Ampleon