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BLC8G27LS-140AV Power LDMOS transistor

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Description

BLC8G27LS-140AV Power LDMOS transistor Rev.4 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
140 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

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Datasheet Specifications

Part number
BLC8G27LS-140AV
Manufacturer
Ampleon
File Size
417.88 KB
Datasheet
BLC8G27LS-140AV-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth

Applications

* at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. Test signal f VDS PL(AV) (MHz) (V) (W) 1-carrier W-CDMA 2496 to 2690 28 28 Gp (dB) 15 D (%) 46 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1;

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