BLC8G27LS-180AV Power LDMOS transistor

Ampleon

Description

BLC8G27LS-180AV Power LDMOS transistor Rev.5 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

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Datasheet Specifications

Part number: BLC8G27LS-180AV
Manufacturer: Ampleon
File Size: 436.67 KB
Datasheet: BLC8G27LS-180AV-Ampleon.pdf
Description: Power LDMOS transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Low thermal resistance providing excellent thermal stability
* Integrated ESD protection
* Designed for low memory effects providing excellent pre-distortability
* Lower output capacitance for i

Applications

* at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 28 14 D (%) 43.5 ACPR (dBc) 30 [1] [1] Test signal: 3

BLC8G27LS-180AV Distributors

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BLC8G27LS-180AV Power LDMOS transistor Ampleon

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