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BLC8G27LS-180AV

Power LDMOS transistor

BLC8G27LS-180AV Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Low thermal resistance providing excellent thermal stability

* Integrated ESD protection

* Designed for low memory effects providing excellent pre-distortability

* Lower output capacitance for i

BLC8G27LS-180AV General Description

180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-car.

BLC8G27LS-180AV Datasheet (436.67 KB)

Preview of BLC8G27LS-180AV PDF

Datasheet Details

Part number:

BLC8G27LS-180AV

Manufacturer:

Ampleon

File Size:

436.67 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G27LS-180AV Power LDMOS transistor Ampleon

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