BLC8G27LS-210PV Power LDMOS transistor

Ampleon

Description

BLC8G27LS-210PV Power LDMOS transistor Rev.4 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number: BLC8G27LS-210PV
Manufacturer: Ampleon
File Size: 496.55 KB
Datasheet: BLC8G27LS-210PV-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
* Designed for broadband operation (2500 MHz to 2700 MHz)
* Lower output capacitance for

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1730 28 65 17 30

BLC8G27LS-210PV Distributors

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BLC8G27LS-210PV Power LDMOS transistor Ampleon

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