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BLC8G27LS-210PV

Power LDMOS transistor

BLC8G27LS-210PV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth performance (150 MHz typical)

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for

BLC8G27LS-210PV General Description

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLC8G27LS-210PV Datasheet (496.55 KB)

Preview of BLC8G27LS-210PV PDF

Datasheet Details

Part number:

BLC8G27LS-210PV

Manufacturer:

Ampleon

File Size:

496.55 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G27LS-210PV Power LDMOS transistor Ampleon

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