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BLC8G27LS-240AV Power LDMOS transistor

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Description

BLC8G27LS-240AV Power LDMOS transistor Rev.5 * 2 December 2016 Product data sheet 1.Product profile 1.1 General .
240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number
BLC8G27LS-240AV
Manufacturer
Ampleon
File Size
448.15 KB
Datasheet
BLC8G27LS-240AV-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High-efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2500 MHz to 2700 MHz)
* Asymmetric design to achieve optimum efficiency across the band
* Lower output capacitance for improved perfo

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%)

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