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BLC9G21LS-60AV Power LDMOS transistor

BLC9G21LS-60AV Description

BLC9G21LS-60AV Power LDMOS transistor Rev.1 * 6 July 2017 Product data sheet 1.Product profile 1.1 General .
60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz.

BLC9G21LS-60AV Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Asymmetric design to achieve optimum efficiency across the band

BLC9G21LS-60AV Applications

* at frequencies from 1805 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 1930 to 1990 28 2.5 17.5 D (%) 30 ACPR (dBc) 39 [1] [1] Test signal: 3GPP test mo

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Datasheet Details

Part number
BLC9G21LS-60AV
Manufacturer
Ampleon
File Size
770.75 KB
Datasheet
BLC9G21LS-60AV-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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