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BLC9G22LS-120VT Power LDMOS transistor

BLC9G22LS-120VT Description

BLC9G22LS-120VT Power LDMOS transistor Rev.1 * 14 July 2017 Product data sheet 1.Product profile 1.1 General .
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.

BLC9G22LS-120VT Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
* Designed for broadband operation (1805 MHz to 1995 MHz)
* Lower output capacitance for

BLC9G22LS-120VT Applications

* at frequencies from 2110 MHz to 2180 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2180 700 28 30 18.1

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Datasheet Details

Part number
BLC9G22LS-120VT
Manufacturer
Ampleon
File Size
610.63 KB
Datasheet
BLC9G22LS-120VT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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