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BLC9G22LS-160VT Power LDMOS transistor

BLC9G22LS-160VT Description

BLC9G22LS-160VT Power LDMOS transistor Rev.2 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.

BLC9G22LS-160VT Features

* Excellent ruggedness
* Excellent video-bandwidth enabling full band operation
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use

BLC9G22LS-160VT Applications

* at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 864 28 35 18.4 33 31 [1]

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Datasheet Details

Part number
BLC9G22LS-160VT
Manufacturer
Ampleon
File Size
640.10 KB
Datasheet
BLC9G22LS-160VT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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