BLC9G24XS-170AV Power LDMOS transistor

Ampleon

Description

BLC9G24XS-170AV Power LDMOS transistor Rev.3 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
170 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

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Datasheet Specifications

Part number: BLC9G24XS-170AV
Manufacturer: Ampleon
File Size: 901.85 KB
Datasheet: BLC9G24XS-170AV-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2300 to 2400 30 28 15.5 D (%) 47 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test mo

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BLC9G24XS-170AV Power LDMOS transistor Ampleon

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