2SC1957(3DG1957) NPN /SILICON NPN TRANSISTOR :。 Purpose: Large signal output amplifier.
/Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 75 V VCEO 40 V VEBO 4.0 V IC 1.0 A PC(Ta=25℃) 0.75 W PC(Tc=25℃) 5.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO hFE VCE(sat) fT Cob PO ηC VCB=40V VCE=10V IC=500mA VCE=10V VCB=10V IE=0 VCC=12V Pj=35mW IE=0 IC=0.5A IB=50mA IC=150mA f=1.0MHz f=27MHz Min 20 150 1.0 60
