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BF94N60 - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF94N60
Manufacturer	BYD
File Size	256.24 KB
Description	N-Channel MOSFET
Datasheet	BF94N60-BYD.pdf

BF94N60 Product details

Description

The N-Channel enhancement mode power field effect transistor is produced using DMOS technology.

Features

z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3) PD.

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Published: Apr 12, 2017 |