BF94N60 Datasheet (BYD) - N-Channel MOSFET

BF94N60, N-Channel MOSFET

The N-Channel enhancement mode power field effect transistor is produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These

BF94N60 Features

* z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche