BF94N60L, BF94N60 N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF94N60/BF94N60L 600V N-Channel MOSFET General .
The N-Channel enhancement mode power field effect transistor is produced using DMOS technology.

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BF94N60L Datasheet Preview — This datasheet PDF includes multiple part numbers: BF94N60L, BF94N60. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BF94N60L, BF94N60
Manufacturer: BYD
File Size: 256.24 KB
Datasheet: BF94N60-BYD.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: BF94N60L, BF94N60.
Please refer to the document for exact specifications by model.

Features

* z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche

BF94N60L Distributors

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BF94N60 N-Channel MOSFET BYD

BYD BF94N60L-like datasheet