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BF95N50L, BF95N50T Datasheet - BYD

BF95N50L - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. T.

BF95N50L Features

* z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single

BF95N50T-BYD.pdf

This datasheet PDF includes multiple part numbers: BF95N50L, BF95N50T. Please refer to the document for exact specifications by model.
BF95N50L Datasheet Preview Page 2 BF95N50L Datasheet Preview Page 3

Datasheet Details

Part number:

BF95N50L, BF95N50T

Manufacturer:

BYD

File Size:

209.02 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: BF95N50L, BF95N50T.
Please refer to the document for exact specifications by model.

BF95N50L Distributor

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BF95N50T N-Channel MOSFET BYD