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BF95N50T - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF95N50T
Manufacturer	BYD
File Size	209.02 KB
Description	N-Channel MOSFET
Datasheet	BF95N50T-BYD.pdf

BF95N50T Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.

Features

z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C).

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Published: Apr 12, 2017 |