BF95N50T Datasheet - BYD

BF95N50T N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. T.

BF95N50T Features

* z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single

BF95N50T-BYD.pdf