BF95N50T N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF95N50T/BF95N50L 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.

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Datasheet Specifications

Part number: BF95N50T
Manufacturer: BYD
File Size: 209.02 KB
Datasheet: BF95N50T-BYD.pdf
Description: N-Channel MOSFET

Features

* z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single

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BF95N50T N-Channel MOSFET BYD

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