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BM2300 Datasheet - Bookly

BM2300 N-Channel Enhancement Mode MOSFET

The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as ce.

BM2300-Bookly.pdf

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Datasheet Details

Part number:

BM2300

Manufacturer:

Bookly

File Size:

291.44 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

BM2300 BM2300 N-Channel Enhancement Mode MOSFET Bookly

BM2300 Distributor