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BSS123

N-Channel ENHANCEMENT MODE MOSFET

BSS123 Features

* Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* High Drain-Source Voltage Rating

* RoHS compliant package Mechanical Data

* Case Material: Molded Plastic. UL Flammability Classification

BSS123 General Description

These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, l.

BSS123 Datasheet (377.80 KB)

Preview of BSS123 PDF

Datasheet Details

Part number:

BSS123

Manufacturer:

Bruckewell

File Size:

377.80 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

BSS123 N-Channel ENHANCEMENT MODE MOSFET Bruckewell

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