BSS123 Datasheet - Bruckewell

BSS123 N-Channel ENHANCEMENT MODE MOSFET

These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, l.

BSS123 Features

* Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* High Drain-Source Voltage Rating

* RoHS compliant package Mechanical Data

* Case Material: Molded Plastic. UL Flammability Classification

BSS123 Datasheet (377.80 KB)

BSS123 Datasheet Preview — Preview of BSS123 PDF

Datasheet Details

Part number:

BSS123

Manufacturer:

Bruckewell

File Size:

377.80 KB

Description:

N-channel enhancement mode mosfet.

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Bruckewell

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