BSS123 Datasheet (Bruckewell) - N-Channel ENHANCEMENT MODE MOSFET

BSS123, N-Channel ENHANCEMENT MODE MOSFET

These N-Channel enhancement mode field effect transistors uses advanced trench technology.

These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, l

BSS123 Features

* Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* High Drain-Source Voltage Rating

* RoHS compliant package Mechanical Data

* Case Material: Molded Plastic. UL Flammability Classification