BSS123 N-Channel ENHANCEMENT MODE MOSFET

Bruckewell

BSS123 Description

BSS123 N-Channel ENHANCEMENT MODE MOSFET .
These N-Channel enhancement mode field effect transistors uses advanced trench technology.

BSS123 Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* High Drain-Source Voltage Rating
* RoHS compliant package Mechanical Data
* Case Material: Molded Plastic. UL Flammability Classification

BSS123 Applications

* such as:
* Small Servo Motor Control
* Power MOSFET Gate Drivers

📥 Download Datasheet

BSS123 Datasheet Preview — Preview of BSS123 PDF

Datasheet Details

Part number: BSS123
Manufacturer: Bruckewell
File Size: 377.80 KB
Datasheet: BSS123-Bruckewell.pdf
Description: N-Channel ENHANCEMENT MODE MOSFET

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BSS123LT1G - N-Channel Power MOSFET (ON Semiconductor)
BSS123N - Small-Signal-Transistor (Infineon Technologies)
BSS123N3 - N-CHANNEL MOSFET (CYStech Electronics)
BSS123W - N-CHANNEL MOSFET (Diodes)

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N-Channel ENHANCEMENT MODE MOSFET Bruckewell

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