Part number:
NX8510UD
Manufacturer:
CEL
File Size:
267.27 KB
Description:
Laser diode.
NX8510UD Datasheet (267.27 KB)
* INTERNAL OPTICAL ISOLATOR
* PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm (Based on ITU-T recommendations)
* OPTICAL OUTPUT POWER Pf = 2.0 mW
* OPERATING CASE TEMPERATURE RANGE TC = -20 to +85°C
* LOW THRESHOLD CURRENT lth = 10 mA TYP. @ TC = 25°C
NX8510UD Datasheet (267.27 KB)
NX8510UD
CEL
267.27 KB
Laser diode.
📁 Related Datasheet
NX8511UD - LASER DIODE
(Renesas)
PRELIMINARY DATA SHEET
LASER DIODE
NX8511UD
1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
DESCRIPTION
The NX8511UD is a 1 550 nm Mu.
NX8511UD - LASER DIODE
(CEL)
PRELIMINARY DATA SHEET
NEC's 1550 nm InGaAsP MQW-DFB TOSA FOR LONG HAUL NX8511UD
2.5 Gb/s APPLICATIONS
FEATURES
• PEAK EMISSION WAVELENGTH: λp = 1 55.
NX8517XC - LASER DIODE
(Renesas)
DATA SHEET
LASER DIODE
NX8517XC Series
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
DESCRIPTION
The NX8517XC is a 1 470 to 1 6.
NX8517XC - LASER DIODE
(CEL)
LASER DIODE
NX8517XC Series
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
1550nm OTDR APPLICATION
DESCRIPTION
DIODE MODULE
.
NX8501 - LASER DIODE
(NEC)
DATA SHEET
LASER DIODE
NX8501 Series
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
DESCRIPTION
The NX8501 Se.
NX8503BG - LASER DIODE
(NEC)
NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
FEATURES
• PEAK EMISSION W.
NX8503BG-CC - NECs 1550 nm InGaAsP MQW DFB LASER DIODE
(NEC)
NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
FEATURES
• PEAK EMISSION W.
NX8503BG-CC - LASER DIODE
(NEC)
NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
FEATURES
• PEAK EMISSION W.
