CEM2108E Datasheet - CET

CEM2108E, Dual N-Channel MOSFET

CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

Features

* 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 8765 SO

CEM2108E-CET.pdf