Datasheet4U Logo Datasheet4U.com

CEM2108E - Dual N-Channel MOSFET

CEM2108E Description

CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

CEM2108E Features

* 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 8765 SO

📥 Download Datasheet

Preview of CEM2108E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CEM2108E
Manufacturer
CET
File Size
515.95 KB
Datasheet
CEM2108E-CET.pdf
Description
Dual N-Channel MOSFET

📁 Related Datasheet

  • CEM2005 - Dual Enhancement Mode Field Effect Transistor(N and Channel) (Chino-Excel Technology)
  • CEM2030 - N- & P-Channel 20-V MOSFET (VBsemi)
  • CEM2030A - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
  • CEM2539 - N-Channel 20-V MOSFET (VBsemi)
  • CEM-1203 - magnetic buzzer (CUI)
  • CEM1010 - Single N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM3252L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

📌 All Tags

Dual N-Channel MOSFET CET
CET CEM2108E-like datasheet