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CEM2108 - Dual N-Channel Enhancement Mode Field Effect Transistor

CEM2108 Description

CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor .

CEM2108 Features

* 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS

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Datasheet Details

Part number
CEM2108
Manufacturer
CET
File Size
140.28 KB
Datasheet
CEM2108_CET.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor CET
CET CEM2108-like datasheet