Part number:
CEM2133
Manufacturer:
CET
File Size:
372.10 KB
Description:
P-channel enhancement mode field effect transistor.
* -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C
CEM2133
CET
372.10 KB
P-channel enhancement mode field effect transistor.
📁 Related Datasheet
CEM2108 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM2108
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high.
CEM2108E - Dual N-Channel MOSFET
(CET)
CEM2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4..
CEM2163 - P-Channel MOSFET
(CET)
CEM2163
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V.
Super high.
CEM2182 - N-Channel MOSFET
(CET)
CEM2182
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V.
.
CEM2187 - P-Channel Enhancement Mode Field Effect Transistor
(CET)
.DataSheet.co.kr
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V.
CEM2192 - Dual N-Channel MOSFET
(CET)
CEM2192
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5.
CEM2005 - Dual Enhancement Mode Field Effect Transistor(N and Channel)
(Chino-Excel Technology)
.
CEM2030 - Dual-Channel MOSFET
(CET)
CEM2030
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V.
-2.
