CEP6060N - N-Channel Enhancement Mode Field Effect Transistor
CEP6060N Features
* 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6060N/CEB6060N D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RA
