Datasheet4U Logo Datasheet4U.com

CES2361 P-Channel MOSFET

CES2361 Description

CES2361 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

CES2361 Features

* -60V, -2.2A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 200mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limi

📥 Download Datasheet

Preview of CES2361 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CES2361
Manufacturer
CET
File Size
331.30 KB
Datasheet
CES2361-CET.pdf
Description
P-Channel MOSFET

📁 Related Datasheet

  • CES2362 - N-Channel MOSFET (Chino-Excel Technology)
  • CES2302 - N-Channel MOSFET (Chino-Excel Technology)
  • CES2303 - P-Channel MOSFET (Chino-Excel Technology)
  • CES2305 - P-Channel MOSFET (Chino-Excel Technology)
  • CES2307 - P-Channel MOSFET (Chino-Excel Technology)
  • CES2308 - N-Channel MOSFET (Chino-Excel Technology)
  • CES2309 - P-Channel MOSFET (Chino-Excel Technology)
  • CES2310 - N-Channel MOSFET (Chino-Excel Technology)

📌 All Tags

CET CES2361-like datasheet