BCW30 Datasheet - CHINA BASE

BCW30 PNP Silicon Epitaxial Planar Transistor

BCW30 PNP Silicon Epitaxial Planar Transistor general purpose switching and amplification Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Base Breakdown V.

BCW30-CHINABASE.pdf