CS100N08A8 Datasheet - CR Micro

CS100N08A8 - Silicon N-Channel Power MOSFET

VDSS 85 V CS100N08 A8, the silicon N-channel Enhanced ID（Silicon limited current） 100 A VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃) 198 W which reduce the conduction loss, improve switching RDS(ON)Typ 6.6 mΩ performance and enhance the avalanche energy.

The transis

CS100N08A8 Features

* Fast Switching

* Low ON Resistance(Rdson≤8.5mΩ)

* Low Gate Charge (Typical Data:59.8nC)

* Low Reverse transfer capacitances(Typical:237pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise

CS100N08A8-CRMicro.pdf