CS100N08A0 Datasheet - CR Micro

CS100N08A0 Silicon N-Channel Power MOSFET

CS100N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS100N08A0 Features

* Fast Switching

* Low ON Resistance(Rdson≤8.5mΩ)

* Low Gate Charge (Typical Data:59.8nC)

* Low Reverse transfer capacitances(Typical:237pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise sp

CS100N08A0-CRMicro.pdf