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CS25N06C3

Silicon N-Channel Power MOSFET

CS25N06C3 Features

* l Fast Switching l Low ON Resistance(Rdson≤29mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger; LED backlight driver; Synchronous rectification VDSS ID PD RDS(ON)Typ 60 V 25 A 36.2 W 23 mΩ

CS25N06C3 General Description

CS25N06 C3 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251,.

CS25N06C3 Datasheet (501.10 KB)

Preview of CS25N06C3 PDF

Datasheet Details

Part number:

CS25N06C3

Manufacturer:

CR Micro

File Size:

501.10 KB

Description:

Silicon n-channel power mosfet.

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CS25N06C3 Silicon N-Channel Power MOSFET CR Micro

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