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CS25N06C4

Silicon N-Channel Power MOSFET

CS25N06C4 Features

* l Fast Switching l Low ON Resistance(Rdson≤29mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger; LED backlight driver; Synchronous rectification VDSS ID PD RDS(ON)Typ 60 V 25 A 36.2 W 23 mΩ

CS25N06C4 General Description

CS25N06 C4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252,.

CS25N06C4 Datasheet (748.93 KB)

Preview of CS25N06C4 PDF

Datasheet Details

Part number:

CS25N06C4

Manufacturer:

CR Micro

File Size:

748.93 KB

Description:

Silicon n-channel power mosfet.

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CS25N06C4 Silicon N-Channel Power MOSFET CR Micro

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