CS25N06B4 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS25N06B4 Datasheet Preview — Preview of CS25N06B4 PDF

Datasheet Details

Part number	CS25N06B4
Manufacturer	Huajing Microelectronics
File Size	697.00 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS25N06B4-HuajingDiscreteDevices.pdf

CS25N06B4 Product details

Description

CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ.

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Published: Dec 6, 2016 |