CS25N06B4 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS25N06 B4 ○R General .
CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number: CS25N06B4
Manufacturer: Huajing Microelectronics
File Size: 697.00 KB
Datasheet: CS25N06B4-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current G

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CS25N06B4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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