CS25N06B4 - Silicon N-Channel Power MOSFET
CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in variou power switching circuit for system miniaturization and highe
CS25N06B4 Features
* l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ Applications： Automotive、DC Motor Control and Class D Amplifier.
