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CS25N06B4 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS25N06B4 Features

* l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ Applications： Automotive、DC Motor Control and Class D Amplifier.

CS25N06B4 General Description

CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power switching circuit for system miniaturization and highe.

CS25N06B4 Datasheet (697.00 KB)

Preview of CS25N06B4 PDF

Datasheet Details

Part number:

CS25N06B4

Manufacturer:

Huajing Microelectronics

File Size:

697.00 KB

Description:

Silicon n-channel power mosfet.

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CS25N06B4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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