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CS25N50FA9R Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS25N50F A9R General .
CS25N50F A9R the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number
CS25N50FA9R
Manufacturer
CR Micro
File Size
617.24 KB
Datasheet
CS25N50FA9R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.27Ω)
* Low Gate Charge (Typical Data:64 nC)
* Low Reverse transfer capacitances(Typical: 10pF)
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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