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CS25N06B3 Datasheet - Huajing Microelectronics

CS25N06B3 Silicon N-Channel Power MOSFET

CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. The transistor can be used in various power switchi.

CS25N06B3 Features

* l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS25N06B3-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS25N06B3

Manufacturer:

Huajing Microelectronics

File Size:

708.02 KB

Description:

Silicon n-channel power mosfet.

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