CS25N10A4 - Silicon N-Channel Power MOSFET
CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
The package form is TO-252
CS25N10A4 Features
* Fast Switching
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to
