CS31N03A4 Datasheet - CR Micro

CS31N03A4 Silicon N-Channel Power MOSFET

CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is TO-25.

CS31N03A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： VDSS ID PD (Tc= 25°C) RDS(ON)Typ 30 V 31 A 13.8 W 13 mΩ Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless oth

CS31N03A4-CRMicro.pdf