CS300N04A8 - Silicon N-Channel Power MOSFET
CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for
CS300N04A8 Features
* l Fast Switching l Low ON Resistance(Rdson≤2.0 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： l BLDC Motor drive applications l Half-bridge and full-bridge topologies l Synchronous rectifier applications l DC/DC and AC/DC conver
