CS30N25FA9R Datasheet - CR Micro

CS30N25FA9R Silicon N-Channel Power MOSFET

CS30N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS30N25FA9R Features

* Fast Switching

* Low ON Resistance(Rdson≤120mΩ)

* Low Gate Charge (Typical Data1:37.1nC)

* Low Reverse transfer capacitances(Typical:22pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwi

CS30N25FA9R-CRMicro.pdf