CS30N50ANR - Silicon N-Channel Power MOSFET
VDSS 500 CS30N50 ANR, the silicon N-channel Enhanced ID 30 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 250 which reduce the conduction loss, improve switching RDS(ON)Typ 0.09 performance and enhance the avalanche energy.
The transistor can be used in various
CS30N50ANR Features
* l Fast Switching l Low ON Resistance(Rdson≤0.12Ω) l Low Gate Charge (Typical Data:153 nC) l Low Reverse transfer capacitances(Typical:29.7 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）：
