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CS30N25A8R Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS30N25 A8R General .
CS30N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number
CS30N25A8R
Manufacturer
CR Micro
File Size
666.32 KB
Datasheet
CS30N25A8R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤120mΩ)
* Low Gate Charge (Typical Data1:37.1nC)
* Low Reverse transfer capacitances(Typical:22pF)

Applications

* Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou

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