CS45N06A4 - Silicon N-Channel Power MOSFET
CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID RDS(ON)Typ performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
The
CS45N06A4 Features
* l Fast Switching l Low ON Resistance(Rdson≤16mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger; LED backlight driver; Synchronous rectification 60 V 45 A 12 mΩ Absolute（Tj= 25℃ unless oth
