CS45N25FA9R-G - Silicon N-Channel Power MOSFET
CS45N25FA9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS45N25FA9R-G Features
* Fast Switching
* Low ON Resistance(Rdson≤85mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS
