CS40N25A8R Datasheet - CR Micro

CS40N25A8R Silicon N-Channel Power MOSFET

CS40N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS40N25A8R Features

* l Fast Switching l Low ON Resistance(Rdson≤94mΩ) l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:23.4pF) l 100% Single Pulse avalanche energy Test Applications： UPS and Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS

CS40N25A8R-CRMicro.pdf