CS40N20FA9E Datasheet - Huajing Microelectronics

CS40N20FA9E Silicon N-Channel Power MOSFET

CS40N20F A9E the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS40N20FA9E Features

* l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VG

CS40N20FA9E-HuajingDiscreteDevices.pdf