Datasheet4U Logo Datasheet4U.com

CS40N20FA9H Datasheet - Huajing Microelectronics

CS40N20FA9H - Silicon N-Channel Power MOSFET

CS40N20FA9H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization an

CS40N20FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: UPS,Inverter,Lighting. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VG

CS40N20FA9H-HuajingDiscreteDevices.pdf

Preview of CS40N20FA9H PDF
CS40N20FA9H Datasheet Preview Page 2 CS40N20FA9H Datasheet Preview Page 3

Datasheet Details

Part number:

CS40N20FA9H

Manufacturer:

Huajing Microelectronics

File Size:

222.40 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags