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CS40N20A8 Datasheet - Huajing Microelectronics

CS40N20A8 - Silicon N-Channel Power MOSFET

CS40N20 A8 the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

CS40N20A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: UPS,Inverter,Lighting. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VG

CS40N20A8-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS40N20A8

Manufacturer:

Huajing Microelectronics

File Size:

215.57 KB

Description:

Silicon n-channel power mosfet.

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