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CS4N60A3HD Datasheet - Huajing Microelectronics

CS4N60A3HD - Silicon N-Channel Power MOSFET

CS4N60 A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS4N60A3HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Paramet

CS4N60A3HD-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS4N60A3HD

Manufacturer:

Huajing Microelectronics

File Size:

352.91 KB

Description:

Silicon n-channel power mosfet.

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