CS4N65A8RZ-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS4N65A8RZ-G, Silicon N-Channel Power MOSFET

CS4N65 A8RZ-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization

CS4N65A8RZ-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.8Ω)

* Low Gate Charge (Typical Data: 14.5nC)

* Low Reverse transfer capacitances(Typical:3.5pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc