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CS4N65A4D Datasheet - HUAJING

CS4N65A4D Silicon N-Channel Power MOSFET

CS4N65 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS4N65A4D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 4 A 75 W 2 Ω Applications： Power switch circuit of adaptor and charger. Ab

CS4N65A4D-HUAJING.pdf

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Datasheet Details

Part number:

CS4N65A4D

Manufacturer:

HUAJING

File Size:

232.29 KB

Description:

Silicon n-channel power mosfet.

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