CS4N65A4D

Silicon N-Channel Power MOSFET

HUAJING

CS4N65A4D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 4 A 75 W 2 Ω Applications： Power switch circuit of adaptor and charger. Ab

CS4N65A4D General Description

CS4N65 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS4N65A4D Datasheet (232.29 KB)

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CS4N65A4D

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HUAJING

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232.29 KB

Description:

Silicon n-channel power mosfet.

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CS4N65A4D Silicon N-Channel Power MOSFET HUAJING

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CS4N65A4D Features

CS4N65A4D General Description

Datasheet Details

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