CS4N65FA9HD Datasheet, Mosfet, HUAJING

CS4N65FA9HD Features

  • Mosfet z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Ap

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Part number:

CS4N65FA9HD

Manufacturer:

HUAJING

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233.94kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

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CS4N65FA9HD Application

  • Applications Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2

TAGS

CS4N65FA9HD
Silicon
N-Channel
Power
MOSFET
HUAJING

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