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CS4N65FA9HD Datasheet - HUAJING

CS4N65FA9HD - Silicon N-Channel Power MOSFET

CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS4N65FA9HD Features

* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Param

CS4N65FA9HD-HUAJING.pdf

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Datasheet Details

Part number:

CS4N65FA9HD

Manufacturer:

HUAJING

File Size:

233.94 KB

Description:

Silicon n-channel power mosfet.

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