CS4N65FA9HD Datasheet - HUAJING

CS4N65FA9HD Silicon N-Channel Power MOSFET

CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS4N65FA9HD Features

* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS4N65FA9HD-HUAJING.pdf