CS4N65FA9HD Datasheet - HUAJING

CS4N65FA9HD, Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65FA9HD General .
CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Details

Part number:

CS4N65FA9HD

Manufacturer:

HUAJING

File Size:

233.94 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single P

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