Part number:
CS4N65FA9HD
Manufacturer:
HUAJING
File Size:
233.94 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS4N65FA9HD Features
* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param
Datasheet Details
CS4N65FA9HD
HUAJING
233.94 KB
Silicon n-channel power mosfet.
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